MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM200DY-HB
• • • • •
IC Collector c...
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM200DY-HB
IC Collector current ........................ 200A VCEX Collector-emitter
voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
14
3-M6
6
B2X B2 E2
48 62
B2X
30
C2E1
E2
C1
B2 E2
5 8
B1X
8 5
E1 B1
6
15
23.5
23 93 108
23 φ6.5
C2E1
E2
C1
18 5 18 5 18
7.5
Tab#110, t=0.5
B1X E1 B1
16 7
LABEL
30
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation
voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 200 200 1240 12 2000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A ...
