QM10HB-2H

MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM10HB-2H IC Collector current .......................... 10A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain................................. 5 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm φ3.2 28 3.5 4 C 20.5 28 (42.5) LABEL B 3 1.1 B C 7.3 E 7.3 14.5 1.6 2.2 2.5 E 0.5 5.5 9 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC PC IB Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector dissipation Base current Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC TC=25°C DC Ratings 1000 1000 1000 7 10 100 2 –40~+150 –40~+125 Charged part to case, AC for 1 minute Mounting screw M3 Typical value 2500 0.59~0.98 6~10 40 Unit V V V V A W A °C °C V N·m kg·cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) hFE ton ts tf Rth (j-c) Q Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cut...