QL85H6S-C

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : www.DataSheet4U.com Model : QL85H6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL85H6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.3 APR.2005 www.DataSheet4U.com ♦OVERVIEW QL85H6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20mW for industrial optical module and sensor applications. ♦APPLICATION - Sensor - Industrial Optical Module ♦FEATURES - Visible Light Output - Optical Power Output - Package Type : : : λp = 850 nm 20mW CW TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View A B C Pin Configuration LD cathode, PD anode (Fig. 1) LD , PD anode (Fig. 2) LD anode, PD cathode (Fig. 3) Fig. 1 QL85H6SA Fig. 2 QL85H6SB Fig. 3 QL85H6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse www.DataSheet4U.com Symbols P V V Topr Tstg Values 22 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C Voltage Operating Temperature Storage Temperature ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence Symbols Po Ith Iop SE Vop M...