Q62702-C633

PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low frequencies Complementary types: BCX 58, BCX 59 (NPN) 1 2 3 Type BCX 78 BCX 78-VII BCX 78-VIII BCX 78-IX BCX 78-X BCX 79 BCX 79-VII BCX 79-VIII BCX 79-IX BCX 79-X Marking – Ordering Code Q62702-C717 Q62702-C626 Q62702-C627 Q62702-C628 Q62702-C629 Q62702-C718 Q62702-C630 Q62702-C631 Q62702-C632 Q62702-C633 Pin Configuration 1 2 3 C B E Package1) TO-92 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCX 78 BCX 79 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC ≤ ≤ Symbol BCX 78 VCE0 VCB0 VEB0 IC ICM IBM Tj Tstg 32 32 Values BCX 79 45 45 5 100 200 200 500 150 – 65 … + 150 Unit V mA Total power dissipation, TC = 70 ˚C Ptot mW ˚C 250 160 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BCX 78 BCX 79 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 2 mA BCX 78 BCX 79 Collector-base breakdown voltage IC = 10 µA BCX 78 BCX 79 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA...