NPN Silicon AF Transistors (For AF driver and output stages High collector current)
BCP 54M ... BCP 56M
NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collecto...
BCP 54M ... BCP 56M
NPN Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation
voltage Complementary types: BCP 51M...BCP 53M(PNP)
4 5 3 2 1
VPW05980
Type BCP 54M BCP 55M BCP 56M
Marking Ordering Code Pin Configuration BAs BEs BHs Q62702-C2595 1 = B Q62702-C2606 Q62702-C2607 2=C 3=E 4 n.c. 5=C
Package SCT-595
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Symbol BCP 54M BCP 55M BCP 56M Unit 45 45 5 60 60 5 80 100 5 V
VCEO VCBO VEBO
DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 77 °C Junction temperature Storage temperature
IC I CM IB I BM Ptot Tj T stg
1 1.5 100 200 1.7 150 -65...+150
mA A mA W °C
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
≤98 ≤43
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Au 1998-11-01 -11-1998
BCP 54M ... BCP 56M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown
voltage typ. max.
Unit
V(BR)CEO
BCP 54M BCP 55M BCP 56M 45 60 80 100 20 250 0.5 1
V
I C = 10 mA, I B = 0
Collector-base breakdown
voltage
V(BR)CBO
BCP 54M BCP 55M BCP 56M 45 60 100
I C = 100 µA, IB = 0
Emitter-base breakdown
voltage
V(BR)EBO I CBO I CBO hFE hFE hFE VCEsat VBE(ON)
5 25 40 25 -
I E = 10 µA, I C = 0
...