PNP Silicon AF Power Transistor (For AF driver and output stages High collector current)
BCP 70M
PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • Lo...
BCP 70M
PNP Silicon AF Power Transistor Preliminary data For AF driver and output stages High collector current Low collector-emitter saturation
voltage
4 5 3 2 1
VPW05980
Type BCP 70M
Marking Ordering Code Pin Configuration PBs Q62702-C2596
Package
1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 94 °C Junction temperature Storage temperature Symbol Value 32 32 5 3 6 200 500 1.7 150 -65...+150 W °C mA A Unit V
VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
≤ 88 ≤ 33
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group Semiconductor Group
11
Jun-05-1998 1998-11-01
BCP 70M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter
Unit max. 100 20 100 nA µA nA V
min. DC Characteristics Collector-emitter breakdown
voltage
typ. -
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE
32 32 5 -
I C = 100 µA, IB = 0 Collector-base breakdown
voltage I C = 100 µA, IB = 0 Emitter-base breakdown
voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0
Collector cutoff current
VCB = 30 V, I E = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, I C = 0
DC current gain 1)
I C = 10 mA, VCE = 5 V I C = 500 mA, V CE = 1 V I C...