Q62702-C2593

BCP 51M ... BCP 53M PNP Silicon AF Transistor For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 54M...BCP 56M(NPN) 4 5 3 2 1 VPW05980 Type BCP 51M BCP 52M BCP 53M Marking Ordering Code Pin Configuration AAs AEs AHs Q62702-C2592 1 = B Q62702-C2593 Q62702-C2594 2=C 3=E 4 n.c. 5=C Package SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Symbol BCP 51M BCP 52M BCP 53M Unit 45 45 5 60 60 5 80 100 5 V VCEO VCBO VEBO DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 77 °C Junction temperature Storage temperature IC I CM IB I BM Ptot Tj T stg 1 1.5 100 200 1.7 150 -65...+150 mA A mA W °C Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤98 ≤43 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BCP 51M ... BCP 53M Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. Unit V(BR)CEO BCP 51M BCP 52M BCP 53M 45 60 80 100 20 250 0.5 1 V I C = 10 mA, I B = 0 Collector-base breakdown voltage V(BR)CBO BCP 51M BCP 52M BCP 53M 45 60 100 I C = 100 µA, IB = 0 Emitter-base breakdown voltage V(BR)EBO I CBO I CBO hFE hFE hFE VCEsat VBE(ON) 5 25 40 25 - I E = 10 µA, I C = 0 C...