PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)
BCP 72M
PNP Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver an...
BCP 72M
PNP Silicon AF Power Transistor Preliminary data Drain switch for RF power amplifier stages For AF driver and output stages High collector current Low collector-emitter saturation
voltage
4 5 3 2 1
VPW05980
Type BCP 72M
Marking Ordering Code Pin Configuration PAs Q62702-C2517
Package
1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 94 °C Junction temperature Storage temperature Symbol Value 10 10 5 3 6 200 500 1.7 150 -65...+150 W °C mA A Unit V
VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
≤ 88 ≤ 33
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group Semiconductor Group
11
Jun-05-1998 1998-11-01
BCP 72M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter
Unit max. 100 20 100 nA µA nA V
min. DC Characteristics Collector-emitter breakdown
voltage
typ. -
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE
10 10 5 -
I C = 10 mA, I B = 0
Collector-base breakdown
voltage
I C = 100 µA, IB = 0 Emitter-base breakdown
voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 8 V, IE = 0
Collector cutoff current
VCB = 8 V, IE = 0 , T A = 150 °C
Emitter cutoff current
VEB = 4 V, I C = 0
DC current gain 1)
I C = 10...