NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
BC 847PN
NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low col...
BC 847PN
NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation
voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation
PIN Configuration
Type BC 847PN
Marking Ordering Code 1Ps Q62702-C2374
Package NPN-Transistor SOT-363
PNP-Transistor
1=E 4=E
2=B 5=B
6=C 3=C
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage DC collector current Peak collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature
Thermal Resistance Junction ambient 1) Junction - soldering point
Symbol
Value 45 50 50 5 100 200 250 150 -65...+150
≤275 ≤140
Unit V
VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg
RthJA RthJS
mA mW °C
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group
1
May-12-1998
BC 847PN
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics per Transistor Collector-emitter breakdown
voltage Symbol min. Values typ. max. 15 5 nA µA 200 250 290 90 200 700 900 660 630 mV 300 650 750 820 V Unit
V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE
45 50 50 5 -
IC = 10 mA, IB = 0
Collector-base breakdown
voltage
IC = 10 µA, IB = 0 Collector-emitter breakdown
voltage IC = 10 µA, VBE = 0
Emitter-base breakdown
voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0 Collector...