Q62702-C2374

BC 847PN NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation PIN Configuration Type BC 847PN Marking Ordering Code 1Ps Q62702-C2374 Package NPN-Transistor SOT-363 PNP-Transistor 1=E 4=E 2=B 5=B 6=C 3=C Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 45 50 50 5 100 200 250 150 -65...+150 ≤275 ≤140 Unit V VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg RthJA RthJS mA mW °C K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 May-12-1998 BC 847PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics per Transistor Collector-emitter breakdown voltage Symbol min. Values typ. max. 15 5 nA µA 200 250 290 90 200 700 900 660 630 mV 300 650 750 820 V Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE 45 50 50 5 - IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector...