Q62702-C2373

BC 857S PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with high matching in one package Type BC 857S Marking 3Cs Ordering Code Q62702-C2373 Pin Configuration 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 Package SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature Symbol Value 45 50 50 5 100 200 250 150 - 65...+150 mW °C mA Unit V VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤275 ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 May-12-1998 BC 857S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics per Transistor Collector-emitter breakdown voltage Symbol min. Values typ. max. 15 5 nA µA 200 250 290 75 250 700 850 650 630 mV 300 650 750 820 V Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE 45 50 50 5 - IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C ...