Q62702-C2330

BC 807-16W PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN) Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking Ordering Code 5As 5Bs 5Cs 5Es 5Fs 5Gs Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 Q62702-C2330 Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 Maximum Ratings Parameter Collector-emitter voltage BC 807 W BC 808 W Collector-base voltage BC 807 W BC 808 W Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation, TS = 130°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 45 25 Unit V VCEO VCBO 50 30 VEBO IC ICM IB Ptot Tj Tstg RthJA RthJS 1 5 500 1 100 250 150 - 65 ... + 150 ≤ 215 ≤ 80 mA A mA mW °C K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Dec-19-1996 BC 807-16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 45 25 160 250 350 100 50 100 V IC = 10 mA, IB = 0 , BC 807 W IC = 10 mA, IB = 0 , BC 808 W Collector-base breakdown voltage V(BR)CBO 50 30 IC = 10 µA, IB = 0 , BC 807 W IC = 10 µA, ...