PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
BC 807-16W
PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low co...
BC 807-16W
PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation
voltage Complementary types: BC817W, BC818W (NPN)
Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W
Marking Ordering Code 5As 5Bs 5Cs 5Es 5Fs 5Gs Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 Q62702-C2330
Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323
Maximum Ratings Parameter Collector-emitter
voltage BC 807 W BC 808 W Collector-base
voltage BC 807 W BC 808 W Emitter-base
voltage DC collector current Peak collector current Base current Total power dissipation, TS = 130°C Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 45 25
Unit V
VCEO
VCBO
50 30
VEBO IC ICM IB Ptot Tj Tstg RthJA RthJS
1
5 500 1 100 250 150 - 65 ... + 150 ≤ 215 ≤ 80 mA A mA mW °C
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
Dec-19-1996
BC 807-16W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown
voltage Values typ. max. Unit
V(BR)CEO
45 25 160 250 350 100 50 100
V
IC = 10 mA, IB = 0 , BC 807 W IC = 10 mA, IB = 0 , BC 808 W
Collector-base breakdown
voltage
V(BR)CBO
50 30
IC = 10 µA, IB = 0 , BC 807 W IC = 10 µA, ...