Q62702-C2321

BC 817-16W NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP) Type BC 817-16W BC 817-25W BC 817-40W BC 818-16W BC 818-25W BC 818-40W Marking Ordering Code 6As 6Bs 6Cs 6Es 6Fs 6Gs Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 Q62702-C2323 Q62702-C2324 Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 Maximum Ratings Parameter Collector-emitter voltage BC 817 W BC 818 W Collector-base voltage BC 817 W BC 818 W Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation, TS = 130°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 45 25 Unit V VCEO VCBO 50 30 VEBO IC ICM IB Ptot Tj Tstg RthJA RthJS 1 5 500 1 100 250 150 - 65 ... + 150 ≤ 215 ≤ 80 mA A mA mW °C K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Dec-19-1996 BC 817-16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 45 25 160 250 350 100 50 100 V IC = 10 mA, IB = 0 , BC 817 W IC = 10 mA, IB = 0 , BC 818 W Collector-base breakdown voltage V(BR)CBO 50 30 IC = 10 µA, IB = 0 , BC 817 W IC = 10 µA, ...