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Q62702-C2259 Datasheet

Part Number Q62702-C2259
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ drver circuit)
Datasheet Q62702-C2259 DatasheetQ62702-C2259 Datasheet (PDF)

BCR 142 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor (R1=22kΩ, R2=47kΩ) Type BCR 142 Marking Ordering Code WZs Q62702-C2259 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 30 100 200 150 - .

  Q62702-C2259   Q62702-C2259






Part Number Q62702-C2258
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Datasheet Q62702-C2259 DatasheetQ62702-C2258 Datasheet (PDF)

BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) Type BCR 141 Marking Ordering Code WDs Q62702-C2258 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 30 100 200 150 -.

  Q62702-C2259   Q62702-C2259







Part Number Q62702-C2257
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Datasheet Q62702-C2259 DatasheetQ62702-C2257 Datasheet (PDF)

BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor ( R1 =10kΩ , R2=47kΩ ) Type BCR 135 Marking WJs Ordering Code Q62702-C2257 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102 °C Junction temperature Storage temperature Symbol Value 50 50 6 20 100 200 1.

  Q62702-C2259   Q62702-C2259







Part Number Q62702-C2256
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Datasheet Q62702-C2259 DatasheetQ62702-C2256 Datasheet (PDF)

BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=10kΩ) Type BCR 133 Marking Ordering Code WCs Q62702-C2256 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 20 100 200 150 -.

  Q62702-C2259   Q62702-C2259







Part Number Q62702-C2255
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Datasheet Q62702-C2259 DatasheetQ62702-C2255 Datasheet (PDF)

BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ) Type BCR 119 Marking Ordering Code WKs Q62702-C2255 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 5 15 100 200 150 - 65 ... +.

  Q62702-C2259   Q62702-C2259







NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ drver circuit)

BCR 142 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor (R1=22kΩ, R2=47kΩ) Type BCR 142 Marking Ordering Code WZs Q62702-C2259 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 30 100 200 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 350 ≤ 240 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Dec-18-1996 BCR 142 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 22 0.47 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 227 70 V 0.3 1.2 2.5 29 0.52 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.5 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.8 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 15 0.42 AC Characteristics Transition freque.


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