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Q62702-C2257 Datasheet

Part Number Q62702-C2257
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Datasheet Q62702-C2257 DatasheetQ62702-C2257 Datasheet (PDF)

BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor ( R1 =10kΩ , R2=47kΩ ) Type BCR 135 Marking WJs Ordering Code Q62702-C2257 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102 °C Junction temperature Storage temperature Symbol Value 50 50 6 20 100 200 1.

  Q62702-C2257   Q62702-C2257






Part Number Q62702-C2259
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ drver circuit)
Datasheet Q62702-C2257 DatasheetQ62702-C2259 Datasheet (PDF)

BCR 142 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor (R1=22kΩ, R2=47kΩ) Type BCR 142 Marking Ordering Code WZs Q62702-C2259 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 30 100 200 150 - .

  Q62702-C2257   Q62702-C2257







Part Number Q62702-C2258
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Datasheet Q62702-C2257 DatasheetQ62702-C2258 Datasheet (PDF)

BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) Type BCR 141 Marking Ordering Code WDs Q62702-C2258 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 30 100 200 150 -.

  Q62702-C2257   Q62702-C2257







Part Number Q62702-C2256
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Datasheet Q62702-C2257 DatasheetQ62702-C2256 Datasheet (PDF)

BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=10kΩ) Type BCR 133 Marking Ordering Code WCs Q62702-C2256 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 20 100 200 150 -.

  Q62702-C2257   Q62702-C2257







Part Number Q62702-C2255
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Datasheet Q62702-C2257 DatasheetQ62702-C2255 Datasheet (PDF)

BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ) Type BCR 119 Marking Ordering Code WKs Q62702-C2255 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 5 15 100 200 150 - 65 ... +.

  Q62702-C2257   Q62702-C2257







NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)

BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor ( R1 =10kΩ , R2=47kΩ ) Type BCR 135 Marking WJs Ordering Code Q62702-C2257 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102 °C Junction temperature Storage temperature Symbol Value 50 50 6 20 100 200 150 65...+150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 350 ≤ 240 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group 1 Jun-18-1997 BCR 135 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage Symbol min. Values typ. 10 0.21 max. 100 167 0.3 1 1.4 13 0.24 kΩ nA µA V V Unit V(BR)CEO V(BR)CBO ICBO IEBO hFE VCEsat Vi(off) Vi(on) R1 R1/R2 50 50 70 0.5 0.5 7 0.19 IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency fT Ccb -.


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