PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
PNP Silicon Darlington Transistors
BCP 28 BCP 48
For general AF applications q High collector current q High current g...
PNP Silicon Darlington Transistors
BCP 28 BCP 48
For general AF applications q High collector current q High current gain q Complementary types: BCP 29/49 (NPN)
q
Type BCP 28 BCP 48
Marking BCP 28 BCP 48
Ordering Code (tape and reel) Q62702-C2134 Q62702-C2135
Pin Configuration
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
1) 2)
Symbol BCP 28 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 30 40 10
Values BCP 48 60 80 10 500 800 100 200 1.5 150
Unit V
mA
W ˚C
– 65 … + 150
Rth JA Rth JS
≤ ≤
75 17
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCP 28 BCP 48
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown
voltage IC = 1 mA, IB = 0 BCP 28 BCP 48 Collector-base breakdown
voltage1) IC = 100 µA, IB = 0 BCP 28 BCP 48 Emitter-base breakdown
voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C VCB = 60 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA...
