PNP Silicon AF Transistor (For general AF application High collector current High current gain)
PNP Silicon AF Transistor
q q q q q
BCP 69
For general AF application High collector current High current gain Low col...
PNP Silicon AF Transistor
q q q q q
BCP 69
For general AF application High collector current High current gain Low collector-emitter saturation
voltage Complementary type: BCP 68 (NPN)
Type BCP 69 BCP 69-10 BCP 69-16 BCP 69-25
Marking BCP 69 BCP 69-10 BCP 69-16 BCP 69-25
Ordering Code (tape and reel) Q62702-C2130 Q62702-C2131 Q62702-C2132 Q62702-C2133
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
1) 2)
Symbol VCE0 VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 20 25 25 5 1 2 100 200 1.5 150 – 65 … + 150
Unit V
A mA W ˚C
Rth JA Rth JS
≤ ≤
72 17
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
01.97
BCP 69
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown
voltage IC = 30 mA, IB = 0 Collector-emitter breakdown
voltage IC = 10 µA, VBE = 0 Collector-base breakdown
voltage IC = 10 µA, IB = 0 Emitter-base breakdown
voltage IE = 10 µA, IB = 0 Collector-base cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter-base cutoff current VEB = 5 V, IC = 0 DC curre...