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Q62702-C1689 Datasheet

Part Number Q62702-C1689
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
Datasheet Q62702-C1689 DatasheetQ62702-C1689 Datasheet (PDF)

PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Out.

  Q62702-C1689   Q62702-C1689






Part Number Q62702-C1688
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Datasheet Q62702-C1689 DatasheetQ62702-C1688 Datasheet (PDF)

PNP Silicon AF Transistors BC 856 ... BC 860 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C1773 Q62702-C1.

  Q62702-C1689   Q62702-C1689







Part Number Q62702-C1687
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
Datasheet Q62702-C1689 DatasheetQ62702-C1687 Datasheet (PDF)

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  Q62702-C1689   Q62702-C1689







Part Number Q62702-C1681
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Transistors (For general AF applications High current gain)
Datasheet Q62702-C1689 DatasheetQ62702-C1681 Datasheet (PDF)

PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN) q Type BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H Marking DAs DBs DCs DFs DGs DHs Ordering Code (tape and reel) Q62702-C1560 Q62702-C1480 Q62702-C1681 Q62702-C1893 Q62702-C1322 Q62702-C1555 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semicond.

  Q62702-C1689   Q62702-C1689







Part Number Q62702-C168
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP SILICON TRANSISTOR
Datasheet Q62702-C1689 DatasheetQ62702-C168 Datasheet (PDF)

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  Q62702-C1689   Q62702-C1689







PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 807 BC 808 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BC 807 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 50 5 Values BC 808 25 30 5 500 1 100 200 330 150 – 65 … + 150 Unit V mA A mA mW ˚C Total power dissipation, TC = 79 ˚C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 807 BC 808 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 807 BC 808 Collector-base breakdown voltage IC = 100 µA BC 807 BC 808 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter c.


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