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Q62702-C1501 Datasheet

Part Number Q62702-C1501
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Darlington Transistors (For general AF applications High collector current)
Datasheet Q62702-C1501 DatasheetQ62702-C1501 Datasheet (PDF)

NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications q High collector current q High current gain q Complementary types: BCV 26, BCV 46 (PNP) q Type BCV 27 BCV 47 Marking FFs FGs Ordering Code (tape and reel) Q62702-C1474 Q62702-C1501 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipa.

  Q62702-C1501   Q62702-C1501






Part Number Q62702-C1507
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Datasheet Q62702-C1501 DatasheetQ62702-C1507 Datasheet (PDF)

PNP Silicon AF Transistors BC 856 ... BC 860 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C1773 Q62702-C1.

  Q62702-C1501   Q62702-C1501







Part Number Q62702-C1506
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
Datasheet Q62702-C1501 DatasheetQ62702-C1506 Datasheet (PDF)

NPN Silicon AF Transistors BC 846 ... BC 850 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type BC 846 A BC 846 B BC 847 A BC 847 B BC 847 C BC 848 A BC 848 B BC 848 C BC 849 B BC 849 C BC 850 B BC 850 C Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs Ordering Code (tape and reel) Q62702-C1772 Q62702-C1746 Q62702-C1.

  Q62702-C1501   Q62702-C1501







Part Number Q62702-C1505
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon AF Transistors
Datasheet Q62702-C1501 DatasheetQ62702-C1505 Datasheet (PDF)

NPN Silicon AF Transistors BC 817 BC 818 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 (PNP) Type BC 817-16 BC 817-25 BC 817-40 BC 818-16 BC 818-25 BC 818-40 Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs Ordering Code Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Out.

  Q62702-C1501   Q62702-C1501







Part Number Q62702-C1504
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
Datasheet Q62702-C1501 DatasheetQ62702-C1504 Datasheet (PDF)

PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Out.

  Q62702-C1501   Q62702-C1501







Part Number Q62702-C1502
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Transistors
Datasheet Q62702-C1501 DatasheetQ62702-C1502 Datasheet (PDF)

PNP Silicon AF Transistors BCX 51 ... BCX 53 Features For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 54 … BCX 56 (NPN) q Type BCX 51 BCX 51-10 BCX 51-16 BCX 52 BCX 52-10 BCX 52-16 BCX 53 BCX 53-10 BCX 53-16 Marking AA AC AD AE AG AM AH AK AL Ordering Code (tape and reel) Q62702-C1847 Q62702-C1831 Q62702-C1857 Q62702-C1743 Q62702-C1744 Q62702-C1900 Q62702-C905 Q62702-C1753 Q62702-C1502 Pin Configuration 1 2 3 B .

  Q62702-C1501   Q62702-C1501







NPN Silicon Darlington Transistors (For general AF applications High collector current)

NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications q High collector current q High current gain q Complementary types: BCV 26, BCV 46 (PNP) q Type BCV 27 BCV 47 Marking FFs FGs Ordering Code (tape and reel) Q62702-C1474 Q62702-C1501 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCV 27 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 30 40 10 Values BCV 47 60 80 10 500 800 100 200 360 150 – 65 … + 150 Unit V mA mW ˚C 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 27 BCV 47 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 27 BCV 47 Collector-base breakdown voltage IC = 100 µA BCV 27 BCV 47 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 27 BC.


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