DatasheetsPDF.com

Q62702-B918 Datasheet

Part Number Q62702-B918
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Datasheet Q62702-B918 DatasheetQ62702-B918 Datasheet (PDF)

BBY 57-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs 2 1 VPS05176 Type BBY 57-03W Marking 5 cathd.red Ordering Code Q62702-B918 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperatur.

  Q62702-B918   Q62702-B918






Part Number Q62702-B916
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Datasheet Q62702-B918 DatasheetQ62702-B916 Datasheet (PDF)

BBY 58-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs • Very low capacitance spread 2 1 VES05991 Type BBY 58-02W Marking 8 Ordering Code Q62702-B916 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating te.

  Q62702-B918   Q62702-B918







Part Number Q62702-B915
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
Datasheet Q62702-B918 DatasheetQ62702-B915 Datasheet (PDF)

BBY 57-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs 2 1 VES05991 Type BBY 57-02W Marking 5 Ordering Code Q62702-B915 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Sto.

  Q62702-B918   Q62702-B918







Part Number Q62702-B912
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Datasheet Q62702-B918 DatasheetQ62702-B912 Datasheet (PDF)

BBY 58-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs • Very low capacitance spread 2 1 VPS05176 Type BBY 58-03W Marking 8 cathd.yellow Ordering Code Q62702-B912 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward curren.

  Q62702-B918   Q62702-B918







Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)

BBY 57-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs 2 1 VPS05176 Type BBY 57-03W Marking 5 cathd.red Ordering Code Q62702-B918 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -03-1998 BBY 57-03W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 1 100 Unit IR IR - nA VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics Diode capacitance CT 16.5 4 17.5 8.7 7.1 4.73 2.45 3.7 0.3 0.09 0.6 18.6 5.5 4.5 - pF VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -03-1998 BBY 57-03W Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capac.


2005-04-16 : LA5603    MLED930    M38198    BU2527A    F4500    ES07D    FDI047AN08A0    FMMT2484    FQP90N10V2    FQPF90N10V2   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)