Q62702-B916

BBY 58-02W Silicon Tuning Diode Preliminary data Excellent linearity High Q hyperabrupt tuning diode Low series inductance Designed for low tuning voltage operation for VCO’s in mobile communications equipment For low frequency control elements such as TCXOs and VCXOs Very low capacitance spread 2 1 VES05991 Type BBY 58-02W Marking 8 Ordering Code Q62702-B916 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-30-1998 1998-11-01 BBY 58-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 1 100 nA Unit IR IR - VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics Diode capacitance CT 17.5 5.5 18.3 12.35 8.6 6 2.15 3.05 0.25 0.09 0.6 19.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-30-1998 1998-11-01 BBY 58-02W Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the di...