Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units)
BB 831
Silicon Variable Capacitance Diode Preliminary data • Frequency range up to 2 GHz special design for use in TV-sa...
BB 831
Silicon Variable Capacitance Diode Preliminary data Frequency range up to 2 GHz special design for use in TV-sat indoor units
Type BB 831
Marking white T
Ordering Code Q62702-B592
Pin Configuration 1=C 2=A
Package SOD-323
Maximum Ratings Parameter Diode reverse
voltage Peak reverse
voltage (R ≥ 5kΩ ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ...+125 -55 ...+150 mA °C Unit V
Semiconductor Group
1
Aug-03-1998
BB 831
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C IR 500 IR 20 nA Symbol min. Values typ. max. Unit
AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 100 MHz Series inductance Ls 1.8 nH rs 1 Ω CT1 /CT28 ∆CT /CT CT 7.8 0.85 7.8 8.8 1.02 8.6 9.8 1.2 9.5 3 % pF
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
Aug-03-1998
BB 831
Diode capacitance CT = f (VR ) f = 1MHz
Semiconductor Group
3
Aug-03-1998
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