Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
BB 112
Silicon Variable Capacitance Diode
q q
BB 112
For AM tuning applications Specified tuning range 1 … 8.0 V
Typ...
BB 112
Silicon Variable Capacitance Diode
q q
BB 112
For AM tuning applications Specified tuning range 1 … 8.0 V
Type BB 112
Marking –
Ordering Code Pin Configuration Q62702-B240
Package1) TO-92
Maximum Ratings Parameter Reverse
voltage Forward current, TA ≤ 60 ˚C Operating temperature range Symbol VR IF Top Values 12 50 – 55 … + 85 Unit V mA ˚C
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
07.94
BB 112
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 10 V VR = 10 V, TA = 60 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V Capacitance ratio VR = 1 V, 8 V Series resistance VR = 1 V, f = 0.5 MHz Q factor VR = 1 V, f = 0.5 MHz Temperature coefficient of diode capacitance VR = 1 V, f = 1 MHz Capacitance matching VR = 1 … 8 V Symbol min. IR – – CT 440 17.5 CT1 CT8 rs Q TCC 15 – – – 470 – – 1.4 480 500 520 34 – – – – – Ω – ppm/K – – 50 200 pF Values typ. max. nA Unit
∆CT
–
–
3
%
C T
Semiconductor Group
2
BB 112
Diode capacitance CT = f (VR)
Capacitance ratio CT/CTref = f (VR)
Capacitance ratio CT/CT1V = f (VR)
Temperature coefficient of junction capacitance TCC = f (VR)
Semiconductor Group
3
...