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Q62702-B195 Datasheet

Part Number Q62702-B195
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Datasheet Q62702-B195 DatasheetQ62702-B195 Datasheet (PDF)

Silicon Tuning Varactor q q q BBY 35 F Hyperabrupt junction tuning diode Frequency linear tuning range 4 … 12 V High figure of merit Type BBY 35 F Marking – Ordering Code Q62702-B195 Pin Configuration Cathode: black dot, heat sink Package1) T1 Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 22 400 175 – 55 … + 150 – 55 … + 150 Unit V mA ˚C 1) For detailed information see.

  Q62702-B195   Q62702-B195






Part Number Q62702-B194
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Datasheet Q62702-B195 DatasheetQ62702-B194 Datasheet (PDF)

Silicon Tuning Varactors BBY 34 C BBY 34 D q q q Hyperabrupt junction tuning diode Frequency linear tuning range 4 … 12 V High figure of merit Type BBY 34 C BBY 34 D Marking – Ordering Code Q62702-B257 Q62702-B194 Pin Configuration Package1) D Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 22 400 175 – 55 … + 150 – 55 … + 150 Unit V mA ˚C 1) For detailed information se.

  Q62702-B195   Q62702-B195







Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)

Silicon Tuning Varactor q q q BBY 35 F Hyperabrupt junction tuning diode Frequency linear tuning range 4 … 12 V High figure of merit Type BBY 35 F Marking – Ordering Code Q62702-B195 Pin Configuration Cathode: black dot, heat sink Package1) T1 Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 22 400 175 – 55 … + 150 – 55 … + 150 Unit V mA ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BBY 35 F Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 10 µA Reverse current VR = 20 V Diode capacitance VR1 = 4 V, f = 1 MHz VR2 = 20 V, f = 1 MHz Capacitance ratio VR1 = 4 V, VR2 = 20 V Figure of merit VR = 4 V, f = 50 MHz Symbol min. V(BR) IR CT 8.5 2.1 CT4 CT20 Q 3.5 250 – – – 350 10 2.4 – – – – 22 – Values typ. – – max. – 10 V nA pF Unit Semiconductor Group 2 .


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