Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance)
BB 857
Silicon Tuning Diode • For SAT-indoor-units • High capacitance ratio • Low series inductance • Low series resista...
BB 857
Silicon Tuning Diode For SAT-indoor-units High capacitance ratio Low series inductance Low series resistance Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure
2
1
VES05991
Type BB 857 BB 857
Marking Ordering Code O O Q62702-B0897 Q62702-B0893 unmatched inline matched
Pin Configuration Package 1=C 2=A SCD-80
Maximum Ratings Parameter Diode reverse
voltage Peak reverse
voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+150 -55 ...+150 mA °C Unit V
VR VRM IF T op T stg
Semiconductor Group Semiconductor Group
11
Mar-27-1998 1998-11-01
BB 857
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 10 200 nA Unit
IR IR
-
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics Diode capacitance
CT
6 0.45 6.6 0.55 0.54 12 12.2 1.5 0.6 7.2 0.65 5 -
pF
VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz
Capacitance ratio
CT1/C T25 CT1/C T28
∆CT/C T
9.7 -
-
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio 1) % Ω nH
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
rs Ls
VR = 5 V, f = 470 MHz
Series inductance
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group Semiconductor Group
22
Mar-27-1998 1998-11-01
BB 857
Diode capa...