Q62702-B0880

BB 659C Silicon Variable Capacitance Diode For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 659C BB 659C Marking Ordering Code H H Q62702-B0884 inline matched Q62702-B0880 unmatched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 - 55 ...+150 - 55 ...+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-24-1998 1998-11-01 BB 659C Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200 Unit IR IR - nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 36 27 2.5 2.4 39 30.2 2.72 2.55 11.1 15.3 42 33.2 3.05 2.8 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.5 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 ∆CT/C T - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) % 0.3 0.5 0.6 0.6 1 2 0.7 Ω nH VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence Series resistance rs Ls - VR = 1 V, f = 1 GHz Series inductance 1) In-line m...