Q62702-A3471

BAW 78M Silicon Switching Diode Preliminary data Switching applications High breakdown voltage 4 5 3 2 1 VPW05980 Type BAW 78M Marking GDs Ordering Code Pin Configuration Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, T S ≤ 110 °C Junction temperature Storage temperature Symbol Values 400 400 1 1 10 1 150 - 65 ...+150 Unit V A VR VRM IF I FM I FS Ptot Tj T stg W °C Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 95 ≤ 40 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jul-27-1998 1998-11-01 BAW 78M Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V Unit V(BR) VF 400 I (BR) = 100 µA Forward voltage IF = 1 A IF = 2 A Reverse current - - 1.6 2 1 50 µA IR IR - VR = 400 V Reverse current VR = 400 V, T A = 150 °C AC characteristics Diode capacitance CD trr - 10 1 - pF ns VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω, measured at IR = 20mA Test circuit for reverse recovery time DUT tr 10% tp t ΙF t rr t ΙF Oscillograph 90% Ι R = 20 mA EHN00020 VR Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = ...