Q62702-A3461

Silicon Dual Schottky Diode DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-099 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-099 Marking Ordering Code (tape and reel) S9 Q62702-A3461 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Power dissipation, TS ≤ 55 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction – ambient2) Junction – soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF Ptot Tstg Top Values 4 90 100 – 55 … + 150 Unit V mA mW – 55 … + 150 ˚C 1090 930 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm. Semiconductor Group 1 02.96 BAT 14-099 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF – – ∆VF Values typ. – max. – 4 Unit V 0.43 0.55 – – 5.5 – – 10 0.35 – mV pF Ω – – – CT RF Semiconductor Group 2 BAT 14-099 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 14-099 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) f...