Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
BAT 17W
Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications
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BAT 17W
Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications
3
2 1
BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W
VSO05561
Type BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W
Marking Ordering Code 53s 54s 55s 56s Q62702-A1271 Q62702-A1272 Q62702-A1273 Q62702-A1274
Pin Configuration 1=A 1 = A1 1 = A1 3 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2
Package SOT-323
Maximum Ratings Parameter Diode reverse
voltage Forward current Symbol Value 4 130 150 150 150 - 55 ...+150 - 55 ...+150 ≤ 435 ≤ 550 ≤ 355 ≤ 390 °C Unit V mA mW
VR IF
Total power dissipation 1) BAT 17W , T A ≤ 97 °C Ptot BAT 17-04W, -05W, -06W , TS ≤ 92 °C Ptot Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) BAT 17W Junction - ambient 1) BAS 17-04W ... Junction - soldering point BAT 17W Junction - soldering point BAT 17-04W ...
Tj Top Tstg RthJA RthJA RthJS RthJS
K/W
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BAT 17W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown
voltage typ. max. -
Unit
V(BR) IR
4
V µA
I (BR) = 10 µA
Reverse current
VR = 3 V VR = 4 V
Reverse current
-
-
0.25 10 1.25 nA mV
IR VF
VR = 3 V, TA = 60 °C
Forward
voltage
I F = 0.1 mA I F = 1 mA I F = 10 mA
AC characteristics Diode capacitance
200 250...