Q62702-A1239

BAS 16-02W Silicon Switching Diode Preliminary data For high-speed switching applications 2 1 VES05991 Type BAS 16-02W Marking 3 Ordering Code Q62702-A1239 Pin Configuration 1=A 2=C Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 119 °C Junction temperature Storage temperature Symbol Value 75 85 250 2.5 100 150 - 65 ...+150 mA A mW °C Unit V VR VRM IF I FS Ptot Tj T stg Semiconductor Group Semiconductor Group 11 Jul-24-1998 1998-11-01 BAS 16-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) VF 75 V mV I (BR) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 1 µA nA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C Forward recovery voltage - - 30 50 1.75 V Vfr I F = 10 mA, t p = 20 ns AC characteristics Diode capacitance CD t rr - - 2 6 pF ns VR = 0 V, f = 20 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00016 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF Semiconductor Group Semiconductor Group 22 Jul-24-1998 1998-11-01 BAS 16-02W Forward current IF = ...