Q62702-A113

Silicon Switching Diodes BAS 19 … BAS 21 q High-speed, high-voltage switch Type BAS 19 BAS 20 BAS 21 Marking JPs JRs JSs Ordering Code (tape and reel) Q62702-A95 Q62702-A113 Q62702-A79 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Total power dissipation, TS = 70 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Symbol BAS 19 VR VRM IF IFM Ptot Tj Tstg 100 120 Values BAS 20 150 200 250 625 350 150 – 65 … + 150 Unit BAS 21 200 250 mA mW ˚C V Rth JA Rth JS ≤ ≤ 300 230 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 07.94 BAS 19 … BAS 21 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage1) I(BR) = 100 µA V(BR) BAS 19 BAS 20 BAS 21 VF – – IR – – – – 100 100 nA µA – – 1 1.25 120 200 250 – – – – – – V Values typ. max. Unit Forward voltage IF = 100 mA IF = 200 mA Reverse current VR = VR max VR = VR max; Tj = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 30 mA, IR = 30 mA, RL = 100 Ω measured at IR = 3 mA Test circuit for reverse recovery time CD trr – – – – 5 50 pF ns Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF 1) ...