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Q62702-A1036 Datasheet

Part Number Q62702-A1036
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet Q62702-A1036 DatasheetQ62702-A1036 Datasheet (PDF)

BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operat.

  Q62702-A1036   Q62702-A1036






Part Number Q62702-A1039
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet Q62702-A1036 DatasheetQ62702-A1039 Datasheet (PDF)

BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operat.

  Q62702-A1036   Q62702-A1036







Part Number Q62702-A1038
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet Q62702-A1036 DatasheetQ62702-A1038 Datasheet (PDF)

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  Q62702-A1036   Q62702-A1036







Part Number Q62702-A1037
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet Q62702-A1036 DatasheetQ62702-A1037 Datasheet (PDF)

BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operat.

  Q62702-A1036   Q62702-A1036







Part Number Q62702-A1031
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Switching Diode Array (For high speed switching applications Common anode)
Datasheet Q62702-A1036 DatasheetQ62702-A1031 Datasheet (PDF)

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  Q62702-A1036   Q62702-A1036







Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR63 BAR 63-04,-05,-06 1) Symbol BAR 63 50 100 250 250 -55 +150°C -55...+150°C Unit V mA mW °C °C VR IF Ptot Top Tstg Rth JA ≤ 450 ≤ 540 K/W Junction-soldering point BAR64 BAR63-04,-05,-06 Rth JS ≤ 280 ≤ 380 _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 23.02.95 BAR 63... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Forward current IF = f (TA*TS) BAR63 V(BR) 50 0.95 0.3 0.21 1.2 1 75 1.4 - V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH IR VF CT CT .


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