Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63-03W
Silicon PIN Diode
l PIN diode for high speed switching of RF signals l Low forward resistance l Very low ca...
BAR 63-03W
Silicon PIN Diode
l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz
Type BAR 63-03W Marking G Ordering Code (tape and reel) Q62702-A1025 Pin Configuration Package 1 2 A C SOD-323
1)
Maximum Ratings Parameter Reverse
voltage Forward current Total Power dissipation TS ≤ 111°C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient
1)
Symbol
BAR 63-03W 50 100 250 -55 +150°C -55...+150°C
Unit V mA mW °C °C
VR IF Ptot Top Tstg
Junction-soldering point
Rth JA Rth JS
≤ 235 ≤ 155
K/W K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 22.07.94
BAR 63-03W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol min.
Value typ. max.
Unit
DC Characteristics Breakdown
voltage IR = 5 µA Reverse leakage VR = 20 V Forward
voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance
V(BR)
50 0.95 0.3 0.21 1.2 1 75 2.0 -
V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH -
IR VF CT CT rf
τL
Ls
Semiconductor Group
2
Edition A01, 22.07.94
BAR 63-03W
Diode capacitance CT = f (VR)
f = 1 MHz
Forward resistance rf = f (IF) f = 100 MHz
Forward current IF = f (TA*TS)
mA
T IF
S
S
T
A
T T A
S...