Q62702-A0062

Silicon Schottky Diode Preliminary Data DBS mixer application to 10 GHz Low noise figure q Low barrier type q q BAT 15-098 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-098 Marking white B Ordering Code Pin Configuration (tape and reel) Q62702-A0062 Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS ≤ 80 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF Ptot Tstg Top Values 4 110 100 – 55 … + 150 Unit V mA mW – 55 … + 150 ˚C 770 690 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAT 15-098 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA/50 mA Symbol min. V(BR) VF – – ∆VF CT RF – – – 0.23 0.32 – – 5.5 – – 20 0.35 – mV pF Ω 4 Values typ. – max. – V Unit Semiconductor Group 2 BAT 15-098 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 15-098 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) f GH...