ON Semiconductort
High Voltage Transistor
PNP Silicon
COLLECTOR 2,4
PZTA92T1
ON Semiconductor Preferred Device
MAXIM...
ON Semiconductort
High
Voltage Transistor
PNP Silicon
COLLECTOR 2,4
PZTA92T1
ON Semiconductor Preferred Device
MAXIMUM RATINGS Rating
Symbol
BASE 1
EMITTER 3
Value
Unit
SOT–223 PACKAGE PNP SILICON
HIGH
VOLTAGE TRANSISTOR SURFACE MOUNT
Collector–Emitter
Voltage Collector–Base
Voltage Emitter–Base
Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING
VCEO VCBO VEBO
IC PD Tstg TJ
–300 –300 –5.0 –500 1.5 –65 to +150 150
Vdc Vdc Vdc mAdc Watts °C °C
4
1 2 3
CASE 318E–04, STYLE 1 TO–261AA
P2D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance from Junction to Ambient(1)
RθJA
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown
Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown
Voltage (IC = –100 µAdc, IE = 0) Emitter–B...