PZTA56

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA56 PNP general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 01 Philips Semiconductors Product specification PNP general purpose transistor FEATURES Low current (max. 500 mA) Low voltage (max. 80 V). APPLICATIONS Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT223 plastic package. NPN complement: PZTA06. handbook, halfpage PZTA56 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 3 1 Top view 2 3 MAM288 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −100 mA; VCE = −1 V IC = −100 mA; VCE = −1 V; f = 100 MHz open emitter open base CONDITIONS − − − − 100 50 MIN. MAX. −80 −80 −1 1.2 − − MHz V V A W UNIT 1997 Apr 01 2 Philips Semiconductors Product specification PNP general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature T...