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PZTA13 Datasheet

Part Number PZTA13
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Darlington Transistors
Datasheet PZTA13 DatasheetPZTA13 Datasheet (PDF)

NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications q High collector current q High current gain q Complementary types: PZTA 63 PZTA 64 (PNP) q Type PZTA 13 PZTA 14 Marking PZTA 13 PZTA 14 Ordering Code (tape and reel) Q62702-Z2033 Q62702-Z2034 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current .

  PZTA13   PZTA13






Part Number PZTA13
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Darlington Transistor
Datasheet PZTA13 DatasheetPZTA13 Datasheet (PDF)

MPSA13 / MMBTA13 / PZTA13 MPSA13 MMBTA13 C PZTA13 C E C B E C B TO-92 E SOT-23 Mark: 1M B SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter.

  PZTA13   PZTA13







Part Number PZTA13
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Darlington Transistors
Datasheet PZTA13 DatasheetPZTA13 Datasheet (PDF)

PZTA13, PZTA14 NPN Silicon Darlington Transistors  For general AF applications  High collector current  High current gain  Complementary types: PZTA63, PZTA64 (PNP) 4 3 2 1 VPS05163 Type PZTA13 PZTA14 Maximum Ratings Parameter Marking PZTA 13 PZTA 14 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCES VCBO VEBO Values 30 30 10 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Bas.

  PZTA13   PZTA13







NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications q High collector current q High current gain q Complementary types: PZTA 63 PZTA 64 (PNP) q Type PZTA 13 PZTA 14 Marking PZTA 13 PZTA 14 Ordering Code (tape and reel) Q62702-Z2033 Q62702-Z2034 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 30 30 10 300 500 100 200 1.5 150 – 65 … + 150 Unit V mA W ˚C 72 17 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZTA 13 PZTA 14 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V PZTA 13 PZTA 14 PZTA 13 PZTA 14 VCEsat VBEsat V(BR)CES V(BR)CB0 V(BR)EB0 .


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