PZT4401

Elektronische Bauelemente Description RoHS Compliant Product The PZT4401 is designed for general purpose switching and amplifier applications. PZT4401 NPN Transistor Epitaxial Planar Transistor SOT-223 Features *High Power Dissipation: 1500mW at 25 oC *High DC Current Gain: 100~300 at 150mA *Complementary to PZT4403 440 1 ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continous) PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Value 60 40 5 600 1.5 -55~+150 Units V V V mA W CO ELECTRICAL CHARACTERISTICS Tamb=25oC Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage DC Current Gain Symbol BVCBO *BVCEO BVEBO ICES *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Min 60 40 5 - 750 20 40 80 *hFE4 *hFE5 100 40 Gain-Bandwidth Product Output Capacitance fT 250 Cob - unless otherwise specified Typ. - - - - - - Max - 100 400 750 950 1.2 - 300 6.5 Unit V V V nA mV mV mV V MHz pF Test Conditions IC= 100µA IC= 1mA IE= 10µA VCE= 35V,VBE=0.4V IC=150m A,IB=15mA IC=500m A,IB=50mA IC=1...