®
PZT3906
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type PZT3906
s
Marking 3906
s
s s
SILICON EPITAXIAL PLANAR ...
®
PZT3906
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type PZT3906
s
Marking 3906
s
s s
SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS PZT3904
2
1
SOT-223
2
3
APPLICATIONS WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION
VOLTAGE
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base
Voltage (I E = 0) Collector-Emitter
Voltage (I B = 0) Emitter-Base
Voltage (I C = 0) Collector Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value -60 -40 -6 -200 1 -65 to 150 150
Unit V V V mA W
o o
C C
June 2002
1/4
PZT3906
THERMAL DATA
R thj-amb Thermal Resistance Junction-Ambient
2
Max
125
o
C/W
Device mounted on a PCB of 1 cm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I BEX Parameter Collector Cut-off Current (V BE = 3 V) Collector Cut-off Current (V BE = 3 V) Test Conditions V CE = -30 V V CE = -30 V I C = -1 mA -40 Min. Typ. Max. -50 -50 Unit nA nA V
V (BR)CEO ∗ Collector-Emitter Breakdown
Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown
Voltage (I E = 0) Emitter-Base Breakdown
Voltage (I C = 0) Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage DC Current Gain
I C = -10 µ A
-60
V
V (BR)EBO
I E = -10 µ A
-6
V
V CE(sat)...