NPN Silicon Switching Transistors
PZT 2222 PZT 2222 A
High DC current gain: 0.1 mA to 500 mA q Low collector-emitter s...
NPN Silicon Switching Transistors
PZT 2222 PZT 2222 A
High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation
voltage q Complementary types: PZT 2907 (PNP) PZT 2907 A (PNP)
q
Type PZT 2222 PZT 2222 A
Marking ZT 2222 ZT 2222 A
Ordering Code (tape and reel) Q62702-Z2026 Q62702-Z2027
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Total power dissipation, TS = 110 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values PZT 2222 PZT 2222 A 30 60 5 40 75 6 600 1.5 150 – 65 … + 150
Unit V
mA W ˚C
87 27
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
PZT 2222 PZT 2222 A
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown
voltage IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A Collector-base breakdown
voltage IC = 10 µA, IB = 0 PZT 2222 PZT 2222 A Emitter-base breakdown
voltage IE = 10 µA, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V, IC = 0 Collector-emitter cutoff current VCE = 30 V, – VBE = 0.5 V Emitter-base cutoff current VCE = 30 V, – VBE = 0...
