DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXTA14 NPN Darlington transistor
Product specification Supersedes data of 1997 Apr 23 1999 Apr 14
Philips Semiconductors
Product specification
NPN Darlington transistor
FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complement: PXTA64. MARKING TYPE NUMBER PXTA14 MARKING CODE p1N
handbook, halfpage
.
NPN Darlington transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXTA14 NPN Darlington transistor
Product specification Supersedes data of 1997 Apr 23 1999 Apr 14
Philips Semiconductors
Product specification
NPN Darlington transistor
FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complement: PXTA64. MARKING TYPE NUMBER PXTA14 MARKING CODE p1N
handbook, halfpage
PXTA14
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
3
2
TR1 TR2 1
MAM300
1 Bottom view
2
3
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for the SOT89 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter VBE = 0 open collector − − − − − − − −65 − −65 MIN. MAX. 30 30 10 500 1 200 1.3 +150 150 +150 V V V mA A mA W °C °C °C UNIT
1999 Apr 14
2
Philips Semiconductors
Product specification
NPN Darling.