PTFA092211EL

PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 Two-carrier WCDMA Performance VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCDMA signal, PAR = 6.5 dB, 5 MHz carrier spacing 40 35 -20 -25 Features Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion = –37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P–1dB = 250 W - Gain = 17.0 dB - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power Pb-free, RoHS-compliant and thermally-enhanced packages Drain Efficiency (%) ACPR (dBc) 30 25 20 15 10 40 41 42 43 44 45 46 47 48 49 -30 Efficiency -35 -40 ACP -45 -50 Output Power, Avg. (dBm) RF Characteristics Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1750 mA, P OUT = 50 W (AVG), ƒ1 = 937.5 MHz, ƒ2 = 942.5 MHz, 3GPP signal, ...