PTFA072401EL

PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA072401EL Package H-33288-2 PTFA072401FL Package H-34288-2 Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz Features Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc Typical CW performance, 770 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Thermally-enhanced packages, Pb-free and RoHS compliant with low gold (<0.25 micron) plating 21 20 19 65 55 Gain (dB) Gain 45 35 25 Drain Efficiency (%) 18 17 16 15 30 35 40 45 50 55 Efficiency 15 5 Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon...