PTFA041501F

PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA041501E Package H-36248-2 PTFA041501F Package H-37248-2 Single-carrier CDMA IS-95 Performance VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 36 38 40 42 44 46 48 45 Features Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Pb-free and RoHS-compliant Adjacent Channel Power Ratio (dB) 30 25 20 15 Drain Efficiency (%) –15°C 25°C 90°C Efficiency 40 35 ACPR ALT 10 5 0 Average Output Power (dBm) RF Characteristics Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz Characteris...