PTF211802E

PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 2.0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz BW 35 -30 Efficiency (%), Gain (dB) 30 25 20 15 10 -35 IMD (dBc), ACPR (dB) Gain Drain Efficiency IM3 -40 -45 -50 -55 PTF211802A Package 20275 ACPR 5 35 37 39 41 43 45 47 -60 Output Power (dBm), Average PTF211802E Package 30275 ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 38 W AVG f1 = 2140 MHz, f2 = 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.0...