PTF210301A

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P–1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power Two–Carrier WCDMA Drive–Up f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB, 10 MHz Carrier Spacing, VDD = 28 V, IDQ = 380 mA -25 Efficiency 30 25 IM3 (dBc), ACPR (dBc) -30 -35 -40 -45 -50 ACPR -55 30 32 34 36 38 40 IM3 Drain Efficiency (%) 20 15 10 5 0 PTF210301A Package 20265 Average Output Power (dBm) PTF210301E Package 30265 RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 380 mA, P OUT = 36.5 dBm f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD Gps hD Min — — — Typ –44 16 20 Max — — — Units dBc dB % Two–T...