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PTF210301

Part Number	PTF210301
Manufacturer	Infineon Technologies AG
Description	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
Published	Apr 16, 2005
Detailed Description	PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally ma...
Datasheet	PTF210301 PDF File

Overview

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 7.
0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P–1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power Two–Carrier WCDM...

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