PTF180901F

Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal to power your amplifier design. A laterally diffused single-ended GOLDMOS ® FET, it incorporates full gold metallization and integrated ESD protection to ensure excellent lifetime and reliability. Performance ■ ■ Features ■ ■ ■ ■ ■ ■ ■ ■ Optimized for bandwidths 1805 MHz – 1880 MHz and 1930 MHz – 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power Typical EDGE performance – Average output power = 35 W – Gain = 14.5 dB – Efficiency = 32% – EVM = 1.7% AVG – ACPR @ 400 KHz = -60 dBc – ACPR @ 600 KHz = -74 dBc Typical two-tone performance – Output power = 90 W PEP – Gain = 15 dB – Efficiency = 36% – IM3 = -30 dBc – 1 MHz tone spacing Ty p e L ist Type PTF180901E PTF180901F Output Power 90 W 90 W Gain 15 dB 15 dB Supply Voltage Package Type 28 V 28 V Thermally enhanced Package 30248 Thermally enhanced, 31248 earless www.infineon.com/wireless Wireless Communication N e v e r s t o p t h i n k i n g . Product Brief Ty p i ca l E D G E E VM Pe r fo r ma n ce 4.0 % 3.0 Efficiency Aver...