PTF180601

PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. EDGE EVM Performance EVM & Efficiency vs. Power Output VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz 4 40 Features Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35% Typical CW performance - Output power at P–1dB = 75 W - Gain = 15.5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power EVM RMS (Average %).. 3 Efficiency 30 Efficiency (%) 2 20 1 EVM 0 35 37 39 41 43 45 10 0 PTF180601C Package 21248 PTF180601E Package 30248 Output Power (dBm) ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 800 mA, P OUT = 22 W, f = 1989.8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 KHz Modulation Spectrum @ 600 KHz Gain Drain Efficiency Symbol EVM (RMS) ACPR ACPR Gps η D Min — — — — — Typ 1.7 –60 –73 16.5 32 Max — — — — — Units % dBc dBc dB % ...