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PTF102027 Datasheet

Part Number PTF102027
Manufacturers Ericsson
Logo Ericsson
Description 40 Watts/ 925-960 MHz GOLDMOS Field Effect Transistor
Datasheet PTF102027 DatasheetPTF102027 Datasheet (PDF)

PTF 102027 40 Watts, 925–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures excellent device lifetime and reliability. • Performance at 960 MHz, 26 Volts - Output Power = 40 Watts - Power Gain = 15.0 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceab.

  PTF102027   PTF102027






Part Number PTF102028
Manufacturers Ericsson
Logo Ericsson
Description 18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Datasheet PTF102027 DatasheetPTF102028 Datasheet (PDF)

PTF 102028 18 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 26 Volts - Output Power = 18 Watts Min - Power Gain = 15 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivat.

  PTF102027   PTF102027







40 Watts/ 925-960 MHz GOLDMOS Field Effect Transistor

PTF 102027 40 Watts, 925–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures excellent device lifetime and reliability. • Performance at 960 MHz, 26 Volts - Output Power = 40 Watts - Power Gain = 15.0 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability • • • Typical Power Output and Efficiency vs. Input Power 70 70 Efficiency 60 50 40 Power Output (Watts) 60 50 40 30 20 10 0 0.0 0.5 Efficiency (%) 1234 5600 50 1020 27 VDD = 26 V IDQ = 250 mA f = 960 MHz 30 20 10 0 Power Output 1.0 1.5 2.0 Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 250 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gpe P-1dB h Y Min 14.5 40 40 10:1 Typ 15 45 53 — Max — — — — Units dB Watts % — e 1 PTF 102027 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.0 — Typ — — — 2.0 Max — 1.0 5.0 — Units Volts mA V.


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